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A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. It can be detect a signal of wavelength
Options
(a) 4000 nm
(b) 6000 nm
(c) 4000Å
(d) 6000Å
Correct Answer:
4000Å
Explanation:
λₘₐₓ = hc / E
= 6.6 x 10⁻³⁴ x 3 x 10⁸ / 2.5 x 1.6 x 10⁻¹⁹ = 5000Å
The wavelength detected by photodiode should be less than λₘₐₓ. Hence it can detect a signal of wavelength 4000Å.
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Topics: Electronic Devices
(124)
Subject: Physics
(2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
- The manifestation of band structure in solids is due to
- In a parallel plate capacitor with plate area A and charge Q, the force on one plate
- A black body radiates 20 W at temperature 227⁰C. It temperature of the black body
- A wheel has moment of inertia 5 x 10⁻³ kgm² and is making 20 revolutions per sec
- A short magnet of magnetic moment M, is placed on a straight line. The ratio
Topics: Electronic Devices (124)
Subject: Physics (2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
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