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A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. It can be detect a signal of wavelength
Options
(a) 4000 nm
(b) 6000 nm
(c) 4000Å
(d) 6000Å
Correct Answer:
4000Å
Explanation:
λₘₐₓ = hc / E
= 6.6 x 10⁻³⁴ x 3 x 10⁸ / 2.5 x 1.6 x 10⁻¹⁹ = 5000Å
The wavelength detected by photodiode should be less than λₘₐₓ. Hence it can detect a signal of wavelength 4000Å.
Related Questions: - A Si and a Ge diode has identical physical dimensions. The bandgap in Si is larger
- When the energy of the incident radiation is increased by 20%,
- Identify the pair whose dimensions are equal
- A radiactive substance emits 100 beta particles in the first 2s and 50 beta
- A coil of inductive reactance 31 Ω has a resistance of 8 Ω. It is placed in series
Topics: Electronic Devices
(124)
Subject: Physics
(2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
- A Si and a Ge diode has identical physical dimensions. The bandgap in Si is larger
- When the energy of the incident radiation is increased by 20%,
- Identify the pair whose dimensions are equal
- A radiactive substance emits 100 beta particles in the first 2s and 50 beta
- A coil of inductive reactance 31 Ω has a resistance of 8 Ω. It is placed in series
Topics: Electronic Devices (124)
Subject: Physics (2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
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