A p-n photodiode is made of a material with a band gap of 2.0 eV

A Pn Photodiode Is Made Of A Material With A Physics Question

A p-n photodiode is made of a material with a band gap of 2.0 eV. The minimum frequency of the radiation that can be absorbed by the material is nearly

Options

(a) 10 x 10¹⁴ Hz
(b) 5 x 10¹⁴ Hz
(c) 1 x 10¹⁴ Hz
(d) 20 x 10¹⁴ Hz

Correct Answer:

5 x 10¹⁴ Hz

Explanation:

Eₑ = 2.0 eV = 2 x 1.6 x 10⁻¹⁹ J
Eₑ = hv v = Eₑ/h = 2 x 1.6 x 10⁻¹⁹ J / 6.62 x 10⁻³⁴ Js
= 0.4833 x 10¹⁵ s⁻¹ = 4.833 x 10¹⁴ Hz
app. 5 x 10¹⁴ Hz

Related Questions:

  1. Water drops fall from a top on the floor 5 m below at regular intervals
  2. The voltage of clouds is 4×10⁶ volt with respect to ground. In a lightening
  3. Length of a conductor is 50 cm radius of cross section 0.1 cm and resistivity
  4. If 20% of a radiactive element decays in 10 days, then amount of original material left
  5. A liquid wets a solid completely. The meniscus of the liquid in a sufficiently long

Topics: Electronic Devices (124)
Subject: Physics (2479)

Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score

18000+ students are using NEETLab to improve their score. What about you?

Solve Previous Year MCQs, Mock Tests, Topicwise Practice Tests, Identify Weak Topics, Formula Flash cards and much more is available in NEETLab Android App to improve your NEET score.

NEETLab Mobile App

Share this page with your friends

Be the first to comment

Leave a Reply

Your email address will not be published.


*