A p-n photodiode is made of a material with a band gap of 2.0 eV

A Pn Photodiode Is Made Of A Material With A Physics Question

A p-n photodiode is made of a material with a band gap of 2.0 eV. The minimum frequency of the radiation that can be absorbed by the material is nearly

Options

(a) 10 x 10¹⁴ Hz
(b) 5 x 10¹⁴ Hz
(c) 1 x 10¹⁴ Hz
(d) 20 x 10¹⁴ Hz

Correct Answer:

5 x 10¹⁴ Hz

Explanation:

Eₑ = 2.0 eV = 2 x 1.6 x 10⁻¹⁹ J
Eₑ = hv v = Eₑ/h = 2 x 1.6 x 10⁻¹⁹ J / 6.62 x 10⁻³⁴ Js
= 0.4833 x 10¹⁵ s⁻¹ = 4.833 x 10¹⁴ Hz
app. 5 x 10¹⁴ Hz

Related Questions:

  1. In a radioactive decay process, the negatively charged emitted β- particles are
  2. A nucleus at rest splits into two nuclear parts having radii in the ratio 1:2.
  3. Minority carriers in a p-type semiconductor are
  4. Unit of electrical conductivity is
  5. The horizontal range and maximum height attained by a projectile are R and H,respectively

Topics: Electronic Devices (124)
Subject: Physics (2479)

Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score

18000+ students are using NEETLab to improve their score. What about you?

Solve Previous Year MCQs, Mock Tests, Topicwise Practice Tests, Identify Weak Topics, Formula Flash cards and much more is available in NEETLab Android App to improve your NEET score.

NEETLab Mobile App

Share this page with your friends

Be the first to comment

Leave a Reply

Your email address will not be published.


*