| ⇦ | ⇨ |
The input resistance of a silicon transistor is 100 W. Base current is changed by 40 µA which results in a change in collector current by 2mA. This transistor is used as a common emitter amplifier with a load resistance of 4 KΩ. The voltage gain of the amplifier is:
Options
(a) 2000
(b) 3000
(c) 4000
(d) 1000
Correct Answer:
2000
Explanation:
Voltage gain (Aᵥ) = Vₒᵤₜ / Vᵢₙ = Iₒᵤₜ / Iᵢₙ x Rₒᵤₜ / Rᵢₙ
Aᵥ = (2 x 10⁻³ / 40 x 10⁻⁶) x (4 x 10³ / 100)
= 2 x 100 = 2000
Related Questions: - Charge q is uniformly spread on a thin ring of radius R. The ring rotates
- What is the energy released by fission of 1 g of U²³⁵?
- Number of electrons in one mC charge, given e=1.6×10⁻¹⁹ C, will be
- A spherical conductor of radius 2 m is charged to a potential of 120 V. It is now
- A force of 10N is applied on a body for 3 sec and the corresponding displacement 6 m.
Topics: Electronic Devices
(124)
Subject: Physics
(2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
- Charge q is uniformly spread on a thin ring of radius R. The ring rotates
- What is the energy released by fission of 1 g of U²³⁵?
- Number of electrons in one mC charge, given e=1.6×10⁻¹⁹ C, will be
- A spherical conductor of radius 2 m is charged to a potential of 120 V. It is now
- A force of 10N is applied on a body for 3 sec and the corresponding displacement 6 m.
Topics: Electronic Devices (124)
Subject: Physics (2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
18000+ students are using NEETLab to improve their score. What about you?
Solve Previous Year MCQs, Mock Tests, Topicwise Practice Tests, Identify Weak Topics, Formula Flash cards and much more is available in NEETLab Android App to improve your NEET score.
Share this page with your friends

Leave a Reply