| ⇦ | 
| ⇨ |
The input resistance of a silicon transistor is 100 W. Base current is changed by 40 µA which results in a change in collector current by 2mA. This transistor is used as a common emitter amplifier with a load resistance of 4 KΩ. The voltage gain of the amplifier is:
Options
(a) 2000
(b) 3000
(c) 4000
(d) 1000
Correct Answer:
2000
Explanation:
Voltage gain (Aᵥ) = Vₒᵤₜ / Vᵢₙ = Iₒᵤₜ / Iᵢₙ x Rₒᵤₜ / Rᵢₙ
Aᵥ = (2 x 10⁻³ / 40 x 10⁻⁶) x (4 x 10³ / 100)
= 2 x 100 = 2000
Related Questions: - Application of a forward bias to a P-N junction
- A capacitor of 2.5 μF is charged through a resistor of 4 MΩ. In how much time
- The wavelength λₑ of an electron and λₚ of a photon are of same energy E are related by
- The liquid-crystal phase of a matter is called
- For an ideal gas of diatomic molecules
Topics: Electronic Devices
(124)
Subject: Physics
(2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
- Application of a forward bias to a P-N junction
- A capacitor of 2.5 μF is charged through a resistor of 4 MΩ. In how much time
- The wavelength λₑ of an electron and λₚ of a photon are of same energy E are related by
- The liquid-crystal phase of a matter is called
- For an ideal gas of diatomic molecules
Topics: Electronic Devices (124)
Subject: Physics (2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
18000+ students are using NEETLab to improve their score. What about you?
Solve Previous Year MCQs, Mock Tests, Topicwise Practice Tests, Identify Weak Topics, Formula Flash cards and much more is available in NEETLab Android App to improve your NEET score.
Share this page with your friends
Leave a Reply