| ⇦ | ⇨ |
The input resistance of a silicon transistor is 100 W. Base current is changed by 40 µA which results in a change in collector current by 2mA. This transistor is used as a common emitter amplifier with a load resistance of 4 KΩ. The voltage gain of the amplifier is:
Options
(a) 2000
(b) 3000
(c) 4000
(d) 1000
Correct Answer:
2000
Explanation:
Voltage gain (Aᵥ) = Vₒᵤₜ / Vᵢₙ = Iₒᵤₜ / Iᵢₙ x Rₒᵤₜ / Rᵢₙ
Aᵥ = (2 x 10⁻³ / 40 x 10⁻⁶) x (4 x 10³ / 100)
= 2 x 100 = 2000
Related Questions: - Electric field at a point of distance r from a uniformly charged wire of infinite
- The kinetic energy of particle moving along a circle of radius R depends
- A particle executing simple harmonic motion of amplitude 5 cm has maximum
- The photoelectric threshold frequency of a metal is ν. When light of frequency 4ν
- A electric dipole is placed at an angle of 30⁰ to a non-uniform electric field.
Topics: Electronic Devices
(124)
Subject: Physics
(2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
- Electric field at a point of distance r from a uniformly charged wire of infinite
- The kinetic energy of particle moving along a circle of radius R depends
- A particle executing simple harmonic motion of amplitude 5 cm has maximum
- The photoelectric threshold frequency of a metal is ν. When light of frequency 4ν
- A electric dipole is placed at an angle of 30⁰ to a non-uniform electric field.
Topics: Electronic Devices (124)
Subject: Physics (2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
18000+ students are using NEETLab to improve their score. What about you?
Solve Previous Year MCQs, Mock Tests, Topicwise Practice Tests, Identify Weak Topics, Formula Flash cards and much more is available in NEETLab Android App to improve your NEET score.
Share this page with your friends

Leave a Reply