| ⇦ | 
| ⇨ |
The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the
Options
(a) Variation of scattering mechanism with temperature
(b) Crystal structure
(c) Variation of the number of charge carries with temperature
(d) Type of bonding
Correct Answer:
Variation of the number of charge carries with temperature
Explanation:
No explanation available. Be the first to write the explanation for this question by commenting below.
Related Questions: - Which of the following is not a transverse wave?
- Fusion reaction takes place at high temperature because
- Which one of the following bonds produces a solid that reflects light in the visible region
- A battery having e.m.f. 4 volt and internal resistance 0.5 Ω is connected
- A particle moves in xy plane according to the equation x = 4t² + 5t + 16 and y = 5t
Topics: Electronic Devices
(124)
Subject: Physics
(2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
- Which of the following is not a transverse wave?
- Fusion reaction takes place at high temperature because
- Which one of the following bonds produces a solid that reflects light in the visible region
- A battery having e.m.f. 4 volt and internal resistance 0.5 Ω is connected
- A particle moves in xy plane according to the equation x = 4t² + 5t + 16 and y = 5t
Topics: Electronic Devices (124)
Subject: Physics (2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
18000+ students are using NEETLab to improve their score. What about you?
Solve Previous Year MCQs, Mock Tests, Topicwise Practice Tests, Identify Weak Topics, Formula Flash cards and much more is available in NEETLab Android App to improve your NEET score.
Share this page with your friends
Leave a Reply