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On adjusting the P-N junction diode in forward bias,
Options
(a) Depletion layer increases
(b) Resistance increases
(c) Both decreases
(d) none of these
Correct Answer:
Both decreases
Explanation:
In forward bias arrangement of P-N junction diode, depletion layer and resistance both decrease.
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Topics: Electronic Devices
(124)
Subject: Physics
(2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
- The energy of groundstate (n=1) of hydrogen level is -13.6 eV. The ionistation
- A body of length 1 m having cross-sectional area 0.75 m² has heat flow through it
- If the number of radius of ²⁷Al is 3.6 Fermi, the approximate nuclear radius
- The depletion layer in the p-n junction region is caused by
- A spring when stretched by 2mm containing energy 4 J. If it is stretched
Topics: Electronic Devices (124)
Subject: Physics (2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
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Becoz width of depletion layer decreases in forward bias and hence allows more current to move i.e.conductivity increases and resistivity decreases ..so both decreases OPTION (C) is correct