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On adjusting the P-N junction diode in forward bias,
Options
(a) Depletion layer increases
(b) Resistance increases
(c) Both decreases
(d) none of these
Correct Answer:
Both decreases
Explanation:
In forward bias arrangement of P-N junction diode, depletion layer and resistance both decrease.
Related Questions: - A charge Q is enclosed by a Gaussian spherical surface of radius R
- The focal length of the objective of a terrestrial telescope is 80 cm
- P-type semiconductors are made by adding impurity element
- The momentum is most closely related to
- 3 persons are initially at the 3 corners of an equilateral triangle
Topics: Electronic Devices
(124)
Subject: Physics
(2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
- A charge Q is enclosed by a Gaussian spherical surface of radius R
- The focal length of the objective of a terrestrial telescope is 80 cm
- P-type semiconductors are made by adding impurity element
- The momentum is most closely related to
- 3 persons are initially at the 3 corners of an equilateral triangle
Topics: Electronic Devices (124)
Subject: Physics (2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
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Becoz width of depletion layer decreases in forward bias and hence allows more current to move i.e.conductivity increases and resistivity decreases ..so both decreases OPTION (C) is correct