| ⇦ | 
| ⇨ |
The bandgap in Germanium and silicon, in eV, are respectively
Options
(a) 0.7 and 1.1
(b) 1.1 and 0.7
(c) 1.1 and zero
(d) zero and 1.1
Correct Answer:
0.7 and 1.1
Explanation:
No explanation available. Be the first to write the explanation for this question by commenting below.
Related Questions: - In an AC circuit the potential differences across an inductance and resistance joined
- If the rise in height of capillary of two tubes is 6.6 cm and 2.2 cm
- If the dimensions of a physical quantity are givenby Mᵃ Lᵇ Tᶜ, then the physical
- A parallel plate capacitor of a capacitance 1 pF has seperation between the plates
- Three fourth of the active material decays in a radioactive sample in 3/4 sec
Topics: Electronic Devices
(124)
Subject: Physics
(2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
- In an AC circuit the potential differences across an inductance and resistance joined
- If the rise in height of capillary of two tubes is 6.6 cm and 2.2 cm
- If the dimensions of a physical quantity are givenby Mᵃ Lᵇ Tᶜ, then the physical
- A parallel plate capacitor of a capacitance 1 pF has seperation between the plates
- Three fourth of the active material decays in a radioactive sample in 3/4 sec
Topics: Electronic Devices (124)
Subject: Physics (2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
18000+ students are using NEETLab to improve their score. What about you?
Solve Previous Year MCQs, Mock Tests, Topicwise Practice Tests, Identify Weak Topics, Formula Flash cards and much more is available in NEETLab Android App to improve your NEET score.
Share this page with your friends
Leave a Reply