Pure Si at 300 k has equal electrons (nₑ) and hole (nh) concentrations

Pure Si At 300 K Has Equal Electrons N And Physics Question

Pure Si at 300 k has equal electrons (nₑ) and hole (nh) concentrations of 1.5×10⁺¹⁶ m⁻³. Dopping by indium, nh increases to 3×10²² m⁻³. What is nₑ in doped Si?

Options

(a) 2.5×10⁹ m⁻³
(b) 5.5×10⁹ m⁻³
(c) 7.5×10⁹ m⁻³
(d) 6×10⁷ m⁻³

Correct Answer:

7.5×10⁹ m⁻³

Explanation:

No explanation available. Be the first to write the explanation for this question by commenting below.

Related Questions:

  1. If oxygen has root mean square velocity of C m/s, then root mean square velocity of H
  2. The ionisation potential of hydrogen-atom is -13.6 eV. An electron in the groundstate
  3. A car of mass m is moving on a level circular track of radius R
  4. Electromagnetic induction is not used in
  5. Thomson coefficient of a conductor is 10 µV/K. Its two ends are kept

Topics: Electronic Devices (124)
Subject: Physics (2479)

Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score

18000+ students are using NEETLab to improve their score. What about you?

Solve Previous Year MCQs, Mock Tests, Topicwise Practice Tests, Identify Weak Topics, Formula Flash cards and much more is available in NEETLab Android App to improve your NEET score.

NEETLab Mobile App

Share this page with your friends

Be the first to comment

Leave a Reply

Your email address will not be published.


*