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Pure Si at 300 k has equal electrons (nₑ) and hole (nh) concentrations of 1.5×10⁺¹⁶ m⁻³. Dopping by indium, nh increases to 3×10²² m⁻³. What is nₑ in doped Si?
Options
(a) 2.5×10⁹ m⁻³
(b) 5.5×10⁹ m⁻³
(c) 7.5×10⁹ m⁻³
(d) 6×10⁷ m⁻³
Correct Answer:
7.5×10⁹ m⁻³
Explanation:
No explanation available. Be the first to write the explanation for this question by commenting below.
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Topics: Electronic Devices
(124)
Subject: Physics
(2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
- The input characteristics of a transistor in CE mode is the graph obtained by plotting
- A point charge q is situated at a distance r on axis from one end of a thin
- An engine is moving towards a wall with a velocity 50 ms⁻¹ emits a note of 1.2 kHz.
- Ohm’s law valid
- In P-N junction having depletion layer of thickness 10⁻⁶ m, the potential across
Topics: Electronic Devices (124)
Subject: Physics (2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
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