| ⇦ | 
| ⇨ |
On adjusting the P-N junction diode in forward bias,
Options
(a) Depletion layer increases
(b) Resistance increases
(c) Both decreases
(d) none of these
Correct Answer:
Both decreases
Explanation:
In forward bias arrangement of P-N junction diode, depletion layer and resistance both decrease.
Related Questions: - The excess pressure inside one soap bubble is three times that inside a second soap bubble
- A hollow metal sphere of radius 10 cm is charged such that the potential on its surface
- The output of OR gate is 1(one)
- A uniform rod of length l is placed with one end in contact with the horizontal
- Four identical cells of emf Ԑ and internal resistance r are to be connected in series.
Topics: Electronic Devices
(124)
Subject: Physics
(2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
- The excess pressure inside one soap bubble is three times that inside a second soap bubble
- A hollow metal sphere of radius 10 cm is charged such that the potential on its surface
- The output of OR gate is 1(one)
- A uniform rod of length l is placed with one end in contact with the horizontal
- Four identical cells of emf Ԑ and internal resistance r are to be connected in series.
Topics: Electronic Devices (124)
Subject: Physics (2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
18000+ students are using NEETLab to improve their score. What about you?
Solve Previous Year MCQs, Mock Tests, Topicwise Practice Tests, Identify Weak Topics, Formula Flash cards and much more is available in NEETLab Android App to improve your NEET score.
Share this page with your friends
Becoz width of depletion layer decreases in forward bias and hence allows more current to move i.e.conductivity increases and resistivity decreases ..so both decreases OPTION (C) is correct