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On adjusting the P-N junction diode in forward bias,
Options
(a) Depletion layer increases
(b) Resistance increases
(c) Both decreases
(d) none of these
Correct Answer:
Both decreases
Explanation:
In forward bias arrangement of P-N junction diode, depletion layer and resistance both decrease.
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e=300 sin[(100 π)t] V
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Topics: Electronic Devices
(124)
Subject: Physics
(2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
- The work done in rotating a magnetic of magnetic moment 2 A-m² in
- The two ends of a rod of length L and a uniform cross-sectional area
- An alternating emf given by equation e=300 sin[(100 π)t] V
- Photons of 5.5 eV energy fall on the surface of the metal emitting photoelectrons
- Thin uniform rod of length L, cross-sectional area A and density ρ is rotated
Topics: Electronic Devices (124)
Subject: Physics (2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
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Becoz width of depletion layer decreases in forward bias and hence allows more current to move i.e.conductivity increases and resistivity decreases ..so both decreases OPTION (C) is correct