A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV.

A Pn Photodiode Is Fabricated From A Semiconductor With A Physics Question

A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. It can be detect a signal of wavelength

Options

(a) 4000 nm
(b) 6000 nm
(c) 4000Å
(d) 6000Å

Correct Answer:

4000Å

Explanation:

λₘₐₓ = hc / E
= 6.6 x 10⁻³⁴ x 3 x 10⁸ / 2.5 x 1.6 x 10⁻¹⁹ = 5000Å
The wavelength detected by photodiode should be less than λₘₐₓ. Hence it can detect a signal of wavelength 4000Å.

Related Questions:

  1. Two coherent monochromatic beams of intensities I and 4I respectively, are superposed.
  2. One coolie takes 1 minute to raise a suitcase through a height of 2 m
  3. A body starts from rest, what is the ratio of the distance travelled by the body
  4. A beam of electron passes undeflected through mutually perpendicular
  5. Three capacitors each of capacitance C and of breakdown voltage V are joined in series

Topics: Electronic Devices (124)
Subject: Physics (2479)

Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score

18000+ students are using NEETLab to improve their score. What about you?

Solve Previous Year MCQs, Mock Tests, Topicwise Practice Tests, Identify Weak Topics, Formula Flash cards and much more is available in NEETLab Android App to improve your NEET score.

NEETLab Mobile App

Share this page with your friends

Be the first to comment

Leave a Reply

Your email address will not be published.


*