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For transistor action:
(1) Base, emitter and collector regions should have similar size and doping concentrations.
(2) The base region must be vary thin and lightly doped.
(3) The emitter-base junction is forward biased and base-collector junction is reverse based.
(4) Both the emitter-base junction as well as the base-collector junction are forward biased.
Options
(a) (3), (4)
(b) (4), (1)
(c) (1), (2)
(d) (2), (3)
Correct Answer:
(2), (3)
Explanation:
For transistor action, the base region must be very thin and lightly doped. Also, the emitter-base junction is forwarded biased and base-collector junction is reverse biased.
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Topics: Electronic Devices
(124)
Subject: Physics
(2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
- To demonstrate the phenomenon of interference, we require two sources which emit
- Carbon,silicon and germanium have four valence electrons each. At room temperature
- An object of mass 3kg is at rest. Now a force F=6t² i⃗+4t j⃗ is applied on the object
- Two spheres A and B of masses m and m respectively collide. A is at rest initially
- Two equal and opposite charges of masses m₁ and m₂ are accelerated
Topics: Electronic Devices (124)
Subject: Physics (2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
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