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For transistor action:
(1) Base, emitter and collector regions should have similar size and doping concentrations.
(2) The base region must be vary thin and lightly doped.
(3) The emitter-base junction is forward biased and base-collector junction is reverse based.
(4) Both the emitter-base junction as well as the base-collector junction are forward biased.
Options
(a) (3), (4)
(b) (4), (1)
(c) (1), (2)
(d) (2), (3)
Correct Answer:
(2), (3)
Explanation:
For transistor action, the base region must be very thin and lightly doped. Also, the emitter-base junction is forwarded biased and base-collector junction is reverse biased.
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- Two discs of moment of inertia I₁ and I₂ and angular speeds ?￢ﾂﾁ and ?￢ﾂﾂ are rotating
- When a string is divided into three segments of length l₁, l₂ and l₃ the fundamental
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Topics: Electronic Devices
(124)
Subject: Physics
(2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
- Zenor breakdown in a semiconductor diode occurs when
- Two discs of moment of inertia I₁ and I₂ and angular speeds ?￢ﾂﾁ and ?￢ﾂﾂ are rotating
- When a string is divided into three segments of length l₁, l₂ and l₃ the fundamental
- On bombarding U²³⁵ by slow neutron, 200 MeV energy is released. If the power output
- A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV.
Topics: Electronic Devices (124)
Subject: Physics (2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
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