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A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. It can be detect a signal of wavelength
Options
(a) 4000 nm
(b) 6000 nm
(c) 4000Å
(d) 6000Å
Correct Answer:
4000Å
Explanation:
λₘₐₓ = hc / E
= 6.6 x 10⁻³⁴ x 3 x 10⁸ / 2.5 x 1.6 x 10⁻¹⁹ = 5000Å
The wavelength detected by photodiode should be less than λₘₐₓ. Hence it can detect a signal of wavelength 4000Å.
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Topics: Electronic Devices
(124)
Subject: Physics
(2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
- The electric field in a certain region is acting radially outward and is given by E=Ar.
- Maximum velocity of the photoelectron emitted by a metal is 1.8×10⁶ ms⁻¹.
- A galvanometer of 50 Ω resistance has 25 divisions. A current of 4×10⁻⁴ A gives
- A wheel of mass 10 kg has a moment of inertia of 10 kgm² about its own axis
- Core of electromagnets are made of ferromagnetic material which has
Topics: Electronic Devices (124)
Subject: Physics (2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
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