The impurity atoms with which pure silicon may be doped to make it a p-type semiconductor are those of
Options
(a) phosphorous (b) antimony (c) boron (d) iron
Correct Answer:
boron
Explanation:
No […]
Charge density for intrinsic semiconductor will be
Options
(a) 15×10¹⁷ m⁻³ (b) 1.6×10¹⁶m⁻³ (c) 5×10¹³m⁻³ (d) 15×10¹⁴m⁻³
Correct Answer:
1.6×10¹⁶m⁻³
Explanation:
For intrinsic semiconductor, Charge density = 1.6 x 10¹⁶ m⁻³
Depletion layer contains
Options
(a) Only immobile negative and positive ions (b) Only free charge carriers (c) Both free carriers and immobile ions (d) None of these
Correct Answer:
Only immobile negative and […]
The bandgap in Germanium and silicon, in eV, are respectively
Options
(a) 0.7 and 1.1 (b) 1.1 and 0.7 (c) 1.1 and zero (d) zero and 1.1
Correct Answer:
0.7 and 1.1
Explanation: […]
P-type semiconductors are made by adding impurity element
Options
(a) As (b) P (c) B (d) Bi
Correct Answer:
B
Explanation:
No explanation available. Be the first to write the explanation for this […]
A p-n photodiode is made of a material with a band gap of 2.0 eV. The minimum frequency of the radiation that can be absorbed by the material is nearly
Options
(a) 10 […]
A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. It can be detect a signal of wavelength
Options
(a) 4000 nm (b) 6000 nm (c) 4000Å (d) […]
A common emitter amplifier has a voltage gain of 50, an input impedance of 100Ω and an output impedance of 200Ω. The power gain of the amplifier is
Options
(a) 500 (b) 1000 […]
A transistor is operated in common-emitter configuration at Vᵥ = 2 V such that a change in the base current from 100 µA to 200 µA produces a change in the collector current from 5 […]
A transformer rated at 10 kW is used to connect a 5 kV transmission line to a 240 V circuit. The ratio of turns in the windings of a transformer
Options
(a) 5 (b) […]
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