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The depletion layer in the p-n junction region is caused by
Options
(a) drift of holes
(b) drift of electrons
(c) diffusion of carriers
(d) migration of impurity ions
Correct Answer:
diffusion of carriers
Explanation:
The depletion is the p-n junction region is caused due to the diffusion of carriers on either side of the junction.
Related Questions: - If the ionisation energy for the hydrogen atom is 13.6 eV, the energy required
- Three capacitors each of capacitance C and of breakdown voltage V are joined in series
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Topics: Electronic Devices
(124)
Subject: Physics
(2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
- If the ionisation energy for the hydrogen atom is 13.6 eV, the energy required
- Three capacitors each of capacitance C and of breakdown voltage V are joined in series
- Water drops fall from a top on the floor 5 m below at regular intervals
- In thermodynamics processes which of the following statements is not true?
- A p-n photodiode is made of a material with a band gap of 2.0 eV
Topics: Electronic Devices (124)
Subject: Physics (2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
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