| ⇦ | 
| ⇨ |
The depletion layer in the p-n junction region is caused by
Options
(a) drift of holes
(b) drift of electrons
(c) diffusion of carriers
(d) migration of impurity ions
Correct Answer:
diffusion of carriers
Explanation:
The depletion is the p-n junction region is caused due to the diffusion of carriers on either side of the junction.
Related Questions: - A parallel plate air capacitor is charged to a potential difference of V volts.
- A potentiometer circuit has been set up for finding the internal resistance of a given
- The focal length of the objective of a terrestrial telescope is 80 cm
- A conducting square frame of side ‘a’ and a long straight wire carrying current I
- Charge passing through a conductor of cross-section area A=0.3 m² is given
Topics: Electronic Devices
(124)
Subject: Physics
(2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
- A parallel plate air capacitor is charged to a potential difference of V volts.
- A potentiometer circuit has been set up for finding the internal resistance of a given
- The focal length of the objective of a terrestrial telescope is 80 cm
- A conducting square frame of side ‘a’ and a long straight wire carrying current I
- Charge passing through a conductor of cross-section area A=0.3 m² is given
Topics: Electronic Devices (124)
Subject: Physics (2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
18000+ students are using NEETLab to improve their score. What about you?
Solve Previous Year MCQs, Mock Tests, Topicwise Practice Tests, Identify Weak Topics, Formula Flash cards and much more is available in NEETLab Android App to improve your NEET score.
Share this page with your friends
Leave a Reply