Pure Si at 500 K has equal number of electron (nₑ) and hole (nₕ) concentrations

⇦

⇨

Pure Si at 500 K has equal number of electron (nₑ) and hole (nₕ) concentrations of 1.5 x 10¹⁶ m⁻³. Doping by indium increases nₕ to 4.5 x 10²² m⁻³. The doped semiconductor is of

Options

(a) n-type with electron concentration nₑ = 5 x 10²² m⁻³
(b) p-type with electron concentration nₑ = 2.5 x 10¹⁰ m⁻³
(c) n-type with electron concentration nₑ = 2.5 x 10²³ m⁻³
(d) p-type with electron concentration nₑ = 5 x 10⁹ m⁻³

Correct Answer:

p-type with electron concentration nₑ = 5 x 10⁹ m⁻³

Explanation:

nᵢ² = nₑ nₕ
(1.5 x 10¹⁶)² = nₑ (4.5 x 10²²)
⇒ nₑ = 0.5 x 10¹⁰ or nₑ = 5 x 10⁹
Given nₕ = 4.5 x 10²² ⇒ nₕ >> nₑ
semiconductor is p-type and
nₑ = 5 x 10⁹ m⁻³.

Related Questions:

1. The ratio of the radii or gyration of a circular disc to that of a circular ring
2. If the angle of minimum deviation is 60° for an equilateral prism, then the refractive
3. A linear aperture whose width is 0.02 cm is placed immediately in front of a lens
4. When ₉₀Th²²⁸ transforms to ₈₃Bi²¹², the number of emitted α and β particles
5. A conveyor belt is moving at a constant speed of 2 m/s. A box is gently dropped on it

Topics: Electronic Devices (124)
Subject: Physics (2479)

---

Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score

18000+ students are using NEETLab to improve their score. What about you?

Solve Previous Year MCQs, Mock Tests, Topicwise Practice Tests, Identify Weak Topics, Formula Flash cards and much more is available in NEETLab Android App to improve your NEET score.

---

Share this page with your friends