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Pure Si at 300 k has equal electrons (nₑ) and hole (nh) concentrations of 1.5×10⁺¹⁶ m⁻³. Dopping by indium, nh increases to 3×10²² m⁻³. What is nₑ in doped Si?
Options
(a) 2.5×10⁹ m⁻³
(b) 5.5×10⁹ m⁻³
(c) 7.5×10⁹ m⁻³
(d) 6×10⁷ m⁻³
Correct Answer:
7.5×10⁹ m⁻³
Explanation:
No explanation available. Be the first to write the explanation for this question by commenting below.
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Topics: Electronic Devices
(124)
Subject: Physics
(2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
- The manifestation of band structure in solids is due to
- An electric charge 10⁻³ μC is placed at the origin (0,0) of X-Y co-ordinate system.
- A current is flowing through resistance. A potential difference of 120 V
- Three identical spherical shells, each of mass m and radius r are placed
- The mean distance between the atoms of iron is 3 x 10⁻¹⁰ m and interatomic force
Topics: Electronic Devices (124)
Subject: Physics (2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
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