⇦ | ![]() | ⇨ |
Pure Si at 300 k has equal electrons (nₑ) and hole (nh) concentrations of 1.5×10⁺¹⁶ m⁻³. Dopping by indium, nh increases to 3×10²² m⁻³. What is nₑ in doped Si?
Options
(a) 2.5×10⁹ m⁻³
(b) 5.5×10⁹ m⁻³
(c) 7.5×10⁹ m⁻³
(d) 6×10⁷ m⁻³
Correct Answer:
7.5×10⁹ m⁻³
Explanation:
No explanation available. Be the first to write the explanation for this question by commenting below.
Related Questions:
- Dimensional formula for electrical resistance R is given by
- If an electron and a proton have the same de-Broglie wavelength, then the kinetic
- Dimensions of resistance in an electrical circuit, in terms of dimension of mass M,
- The effective length of magnet is 31.4 cm and its pole strength is 0.8Am.
- In communication with help of antenna if height is doubled then the range
Topics: Electronic Devices
(124)
Subject: Physics
(2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
18000+ students are using NEETLab to improve their score. What about you?
Solve Previous Year MCQs, Mock Tests, Topicwise Practice Tests, Identify Weak Topics, Formula Flash cards and much more is available in NEETLab Android App to improve your NEET score.
Share this page with your friends
Leave a Reply