| ⇦ |
| ⇨ |
In a n-p-n transistor about 10¹⁰ electrons enter the emitter in 2 μs, when it is connected to a battery. Then, Iе=…….μA.
Options
(a) 400
(b) 200
(c) 800
(d) 1600
Correct Answer:
800
Explanation:
No explanation available. Be the first to write the explanation for this question by commenting below.
Related Questions: - Depletion layer contains
- The logic behind NOR gate is that it gives
- In forward biasing of the p-n junction
- For CE transistor amplifier, the audio signal voltage across the collector resistance
- Two lenses of power 15 D and -3 D are placed in contact.
Topics: Electronic Devices
(124)
Subject: Physics
(2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
- Depletion layer contains
- The logic behind NOR gate is that it gives
- In forward biasing of the p-n junction
- For CE transistor amplifier, the audio signal voltage across the collector resistance
- Two lenses of power 15 D and -3 D are placed in contact.
Topics: Electronic Devices (124)
Subject: Physics (2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
18000+ students are using NEETLab to improve their score. What about you?
Solve Previous Year MCQs, Mock Tests, Topicwise Practice Tests, Identify Weak Topics, Formula Flash cards and much more is available in NEETLab Android App to improve your NEET score.
Share this page with your friends

Leave a Reply