| ⇦ |
| ⇨ |
In a n-p-n transistor about 10¹⁰ electrons enter the emitter in 2 μs, when it is connected to a battery. Then, Iе=…….μA.
Options
(a) 400
(b) 200
(c) 800
(d) 1600
Correct Answer:
800
Explanation:
No explanation available. Be the first to write the explanation for this question by commenting below.
Related Questions: - Cathode rays are produced when the pressure is of the order of
- The friction of the air causes a vertical retardation equal to 10%
- A Si and a Ge diode has identical physical dimensions. The bandgap in Si is larger
- A bar magnet has a coercivity of 4×10³ Am⁻¹. It is placed inside a solenoid
- A beam of electron passes undeflected through mutually perpendicular
Topics: Electronic Devices
(124)
Subject: Physics
(2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
- Cathode rays are produced when the pressure is of the order of
- The friction of the air causes a vertical retardation equal to 10%
- A Si and a Ge diode has identical physical dimensions. The bandgap in Si is larger
- A bar magnet has a coercivity of 4×10³ Am⁻¹. It is placed inside a solenoid
- A beam of electron passes undeflected through mutually perpendicular
Topics: Electronic Devices (124)
Subject: Physics (2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
18000+ students are using NEETLab to improve their score. What about you?
Solve Previous Year MCQs, Mock Tests, Topicwise Practice Tests, Identify Weak Topics, Formula Flash cards and much more is available in NEETLab Android App to improve your NEET score.
Share this page with your friends

Leave a Reply