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For transistor action:
(1) Base, emitter and collector regions should have similar size and doping concentrations.
(2) The base region must be vary thin and lightly doped.
(3) The emitter-base junction is forward biased and base-collector junction is reverse based.
(4) Both the emitter-base junction as well as the base-collector junction are forward biased.
Options
(a) (3), (4)
(b) (4), (1)
(c) (1), (2)
(d) (2), (3)
Correct Answer:
(2), (3)
Explanation:
For transistor action, the base region must be very thin and lightly doped. Also, the emitter-base junction is forwarded biased and base-collector junction is reverse biased.
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Topics: Electronic Devices
(124)
Subject: Physics
(2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
- A thin convex lens of refractive index 1.5 has 20 cm focal length in air. If the lens
- A bus is moving with a velocity of 5 ms⁻¹ towards a huge wall.
- A lift is moving down with acceleration a.A man in the lift drops a ball
- A solid body rotates about a stationary axis, so that its angular velocity
- 4.0 g of a gas occupies 22.4 litres at NTP. The specific heat capacity of the gas
Topics: Electronic Devices (124)
Subject: Physics (2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
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