| ⇦ | 
| ⇨ |
For transistor action:
(1) Base, emitter and collector regions should have similar size and doping concentrations.
(2) The base region must be vary thin and lightly doped.
(3) The emitter-base junction is forward biased and base-collector junction is reverse based.
(4) Both the emitter-base junction as well as the base-collector junction are forward biased.
Options
(a) (3), (4)
(b) (4), (1)
(c) (1), (2)
(d) (2), (3)
Correct Answer:
(2), (3)
Explanation:
For transistor action, the base region must be very thin and lightly doped. Also, the emitter-base junction is forwarded biased and base-collector junction is reverse biased.
Related Questions: - The magnetic lines of force inside a bar magnet
- Moment of inertia of a uniform circular disc about a diameter is I. Its moment
- Watt hour mter measures
- Four point masses, each of value m, are placed at the corners of a square ABCD
- There is a ring of radius r having linear charge densityλ and rotating with a uniform
Topics: Electronic Devices
(124)
Subject: Physics
(2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
- The magnetic lines of force inside a bar magnet
- Moment of inertia of a uniform circular disc about a diameter is I. Its moment
- Watt hour mter measures
- Four point masses, each of value m, are placed at the corners of a square ABCD
- There is a ring of radius r having linear charge densityλ and rotating with a uniform
Topics: Electronic Devices (124)
Subject: Physics (2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
18000+ students are using NEETLab to improve their score. What about you?
Solve Previous Year MCQs, Mock Tests, Topicwise Practice Tests, Identify Weak Topics, Formula Flash cards and much more is available in NEETLab Android App to improve your NEET score.
Share this page with your friends
Leave a Reply