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For transistor action:
(1) Base, emitter and collector regions should have similar size and doping concentrations.
(2) The base region must be vary thin and lightly doped.
(3) The emitter-base junction is forward biased and base-collector junction is reverse based.
(4) Both the emitter-base junction as well as the base-collector junction are forward biased.
Options
(a) (3), (4)
(b) (4), (1)
(c) (1), (2)
(d) (2), (3)
Correct Answer:
(2), (3)
Explanation:
For transistor action, the base region must be very thin and lightly doped. Also, the emitter-base junction is forwarded biased and base-collector junction is reverse biased.
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Topics: Electronic Devices
(124)
Subject: Physics
(2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
- A L-C-R circuit with L=1.00 mH, C=10μF and R=50Ω, is driven with 5 V AC voltage.
- A galvanometer acting as a voltmeter will have
- The heat dissipated in a resistance can be obtained by measuring of resistance,
- A tuning fork of frequency x produces 4 beats with a source of 256 Hz and 8 beats
- A parallel beam of fast moving electrons is incident normally on a narrow slit.
Topics: Electronic Devices (124)
Subject: Physics (2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
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