MENU

A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV.

A Pn Photodiode Is Fabricated From A Semiconductor With A Physics Question

A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. It can be detect a signal of wavelength

Options

(a) 4000 nm
(b) 6000 nm
(c) 4000Å
(d) 6000Å

Correct Answer:

4000Å

Explanation:

λₘₐₓ = hc / E
= 6.6 x 10⁻³⁴ x 3 x 10⁸ / 2.5 x 1.6 x 10⁻¹⁹ = 5000Å
The wavelength detected by photodiode should be less than λₘₐₓ. Hence it can detect a signal of wavelength 4000Å.

Related Questions:

  1. A particle of mass m executes simple harmonic motion with amplitude
  2. Bohr’s postulates quantizes
  3. The energy of the em waves is of the order of 15 keV. To which part of the spectrum
  4. A capacitor of capacitance 100μF is charged by connecting it to a battery of voltage
  5. A bomb of mass 30 kg at rest exploded into two pieces of masses 18 kg

Topics: Electronic Devices (124)
Subject: Physics (2479)

Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score

18000+ students are using NEETLab to improve their score. What about you?

Solve Previous Year MCQs, Mock Tests, Topicwise Practice Tests, Identify Weak Topics, Formula Flash cards and much more is available in NEETLab Android App to improve your NEET score.

NEETLab Mobile App

Share this page with your friends

Be the first to comment

Leave a Reply

Your email address will not be published.


*