A p-n photodiode is made of a material with a band gap of 2.0 eV
A p-n photodiode is made of a material with a band gap of 2.0 eV. The minimum frequency of the radiation that can be absorbed by the material is nearly
Options
(a) 10 […]
Electronic Devices
A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV.
A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. It can be detect a signal of wavelength
Options
(a) 4000 nm (b) 6000 nm (c) 4000Å (d) […]
A common emitter amplifier has a voltage gain of 50, an input impedance of 100Ω
A common emitter amplifier has a voltage gain of 50, an input impedance of 100Ω and an output impedance of 200Ω. The power gain of the amplifier is
Options
(a) 500 (b) 1000 […]
A transistor is operated in common-emitter configuration at Vᵥ = 2 V such that a change
A transistor is operated in common-emitter configuration at Vᵥ = 2 V such that a change in the base current from 100 µA to 200 µA produces a change in the collector current from 5 […]
A pure semiconductor behaves slightly as a conductor at
A pure semiconductor behaves slightly as a conductor at
Options
(a) Room temperature (b) Low temperature (c) High temperature (d) Both b and c
Correct Answer:
Room temperature
Explanation:
No explanation available. Be […]
Avalanche breakdown is due to
Avalanche breakdown is due to
Options
(a) Collision of minority charge carrier (b) Increase in depletion layer thickness (c) Decrease in depletion layer thickness (d) none of these
Correct Answer:
Collision of minority […]
A p-n-p transistor is used in common emitter mode in an amplifier circuit.
A p-n-p transistor is used in common emitter mode in an amplifier circuit. When base current is changed by an amount ∆Iв, then the collector current changes by 4 mA. If the current amplification factor […]
Application of a forward bias to a P-N junction
Application of a forward bias to a P-N junction
Options
(a) Widens the depletion region (b) Increases the potential difference across the depletion zone (c) Increases the number of doners on the N […]
In N-type semi-conductor current is due to
In N-type semi-conductor current is due to
Options
(a) Electrons (b) Holes (c) Electrons and holes (d) None of these
Correct Answer:
Electrons
Explanation:
No explanation available. Be the first to write the […]
An LED is constructed from a p-n junction based on a certain semi-conducting
An LED is constructed from a p-n junction based on a certain semi-conducting material whose energy gap is 1.9 eV. Then, the wavelength of the emitted light is
Options
(a) 6.5×10⁻⁷ m (b) […]