Pure Si at 300 k has equal electrons (nₑ) and hole (nh) concentrations

Pure Si At 300 K Has Equal Electrons N And Physics Question

Pure Si at 300 k has equal electrons (nₑ) and hole (nh) concentrations of 1.5×10⁺¹⁶ m⁻³. Dopping by indium, nh increases to 3×10²² m⁻³. What is nₑ in doped Si?

Options

(a) 2.5×10⁹ m⁻³
(b) 5.5×10⁹ m⁻³
(c) 7.5×10⁹ m⁻³
(d) 6×10⁷ m⁻³

Correct Answer:

7.5×10⁹ m⁻³

Explanation:

No explanation available. Be the first to write the explanation for this question by commenting below.

Related Questions:

  1. The value of n so that vectors 2i+3j-2k, 5i+nj+k and -i+2j+3k may be coplanar,will be
  2. A spring of spring constant 5 x 10³ N/m is stretched initially by 5 cm
  3. RMS velocity of gas is proportional to
  4. A thermally insulated rigid container contains an ideal gas heated by a filament
  5. A stone thrown into still water, creates a circular wave pattern moving radially

Topics: Electronic Devices (124)
Subject: Physics (2479)

Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score

18000+ students are using NEETLab to improve their score. What about you?

Solve Previous Year MCQs, Mock Tests, Topicwise Practice Tests, Identify Weak Topics, Formula Flash cards and much more is available in NEETLab Android App to improve your NEET score.

NEETLab Mobile App

Share this page with your friends

Be the first to comment

Leave a Reply

Your email address will not be published.


*