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C and Si both have same lattice strcture, having 4 bonding electron in each. However, C is insulator whereas Si is intrinsic semiconductor. This is because:
Options
(a) In case of V the valence band is not completely filled at absolute zero temperature.
(b) In case of C the conduction band is partly filled even at absolute zero temperature.
(c) The four bonding electrons in the case of C lie in the second orbit, whereas in the case of Si they lie in the third.
(d) The four bonding electrons in the case of C lie in the third orbit, whereas for Si they lie in the fourth orbit.
Correct Answer:
The four bonding electrons in the case of C lie in the second orbit, whereas in the case of Si they lie in the third.
Explanation:
Electronic configuration of ⁶C = 1s², 2s², 2p²
The electronic condiguration of ¹⁴Si = 1s², 2s², 2p⁶, 3s², 3p²
As they are away from nucleus, so effectg of nucleus is low for Si even for Sn and Pb are most mettalic.
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Topics: Electronic Devices
(124)
Subject: Physics
(2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
- Energy in a current carrying coil is stored in the form of
- When ₉₀Th²²⁸ transforms to ₈₃Bi²¹², the number of emitted α and β particles
- λ₁ and λ₂ are used to illuminate the slits. β₁ and β₂ are the corresponding fringe
- A magnetic needle suspended parallel to a magnetic field requires √3J of work
- Number of electrons in one mC charge, given e=1.6×10⁻¹⁹ C, will be
Topics: Electronic Devices (124)
Subject: Physics (2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
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