The bandgap in Germanium and silicon, in eV, are respectively

The Bandgap In Germanium And Silicon In Ev Are Respectively Physics Question

The bandgap in Germanium and silicon, in eV, are respectively

Options

(a) 0.7 and 1.1
(b) 1.1 and 0.7
(c) 1.1 and zero
(d) zero and 1.1

Correct Answer:

0.7 and 1.1

Explanation:

No explanation available. Be the first to write the explanation for this question by commenting below.

Related Questions:

  1. In a pure capacitive A.C circuit, current and voltage differ in phase by
  2. If sink is at a temperature of -39⁰C and source at 0⁰C, then efficiency will be
  3. The value of coefficient of volume expansion of glycerin is 5 x 10⁻⁴ k⁻¹.
  4. Two beams of light having intensities I and 4I interfere to produce a fringe pattern
  5. Complete the reaction: ₀n¹+ ₉₂U²³⁵→₅₆Ba¹⁴⁴+……..+3n

Topics: Electronic Devices (124)
Subject: Physics (2479)

Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score

18000+ students are using NEETLab to improve their score. What about you?

Solve Previous Year MCQs, Mock Tests, Topicwise Practice Tests, Identify Weak Topics, Formula Flash cards and much more is available in NEETLab Android App to improve your NEET score.

NEETLab Mobile App

Share this page with your friends

Be the first to comment

Leave a Reply

Your email address will not be published.


*