| ⇦ | 
| ⇨ |
The depletion layer in the p-n junction region is caused by
Options
(a) drift of holes
(b) drift of electrons
(c) diffusion of carriers
(d) migration of impurity ions
Correct Answer:
diffusion of carriers
Explanation:
The depletion is the p-n junction region is caused due to the diffusion of carriers on either side of the junction.
Related Questions: - In common base mode of a transistor, the collector current is 5.488 mA
- A 50Hz AC signal is applied in a circuit of inductance of (1/π)H and resistance 2100Ω
- A parallel plate capacitor as a uniform electric field E in the space between the plates
- The intermediate image formed by the objective of a compound microscope is
- In a series resonant LCR circuit, the voltage across R is 100 volts and R =1kΩ
Topics: Electronic Devices
(124)
Subject: Physics
(2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
- In common base mode of a transistor, the collector current is 5.488 mA
- A 50Hz AC signal is applied in a circuit of inductance of (1/π)H and resistance 2100Ω
- A parallel plate capacitor as a uniform electric field E in the space between the plates
- The intermediate image formed by the objective of a compound microscope is
- In a series resonant LCR circuit, the voltage across R is 100 volts and R =1kΩ
Topics: Electronic Devices (124)
Subject: Physics (2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
18000+ students are using NEETLab to improve their score. What about you?
Solve Previous Year MCQs, Mock Tests, Topicwise Practice Tests, Identify Weak Topics, Formula Flash cards and much more is available in NEETLab Android App to improve your NEET score.
Share this page with your friends
Leave a Reply