| ⇦ | 
| ⇨ |
The barrier potential of a p-n junction depends on
(1) type of semiconductor material
(2) amount of doping
(3) temperature
Which one of the following is correct?
Options
(a) (1) and (2) only
(b) (2) only
(c) (2) and (3) only
(d) (1),(2) and (3)
Correct Answer:
(1),(2) and (3)
Explanation:
No explanation available. Be the first to write the explanation for this question by commenting below.
Related Questions: - Power dissipated in an LCR series circuit connected to an a.c source of emf ? is
- The threshold frequency for a photosensitive metal is 3.3 x 10¹⁴ Hz.
- The average power dissipated in a pure inductor is
- Acceleration of a particle, executing SHM, at its mean position is
- 180⁰ phase difference is obtained when light ray is reflected from
Topics: Electronic Devices
(124)
Subject: Physics
(2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
- Power dissipated in an LCR series circuit connected to an a.c source of emf ? is
- The threshold frequency for a photosensitive metal is 3.3 x 10¹⁴ Hz.
- The average power dissipated in a pure inductor is
- Acceleration of a particle, executing SHM, at its mean position is
- 180⁰ phase difference is obtained when light ray is reflected from
Topics: Electronic Devices (124)
Subject: Physics (2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
18000+ students are using NEETLab to improve their score. What about you?
Solve Previous Year MCQs, Mock Tests, Topicwise Practice Tests, Identify Weak Topics, Formula Flash cards and much more is available in NEETLab Android App to improve your NEET score.
Share this page with your friends
Leave a Reply