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C and Si both have same lattice strcture, having 4 bonding electron in each. However, C is insulator whereas Si is intrinsic semiconductor. This is because:
Options
(a) In case of V the valence band is not completely filled at absolute zero temperature.
(b) In case of C the conduction band is partly filled even at absolute zero temperature.
(c) The four bonding electrons in the case of C lie in the second orbit, whereas in the case of Si they lie in the third.
(d) The four bonding electrons in the case of C lie in the third orbit, whereas for Si they lie in the fourth orbit.
Correct Answer:
The four bonding electrons in the case of C lie in the second orbit, whereas in the case of Si they lie in the third.
Explanation:
Electronic configuration of ⁶C = 1s², 2s², 2p²
The electronic condiguration of ¹⁴Si = 1s², 2s², 2p⁶, 3s², 3p²
As they are away from nucleus, so effectg of nucleus is low for Si even for Sn and Pb are most mettalic.
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Topics: Electronic Devices
(124)
Subject: Physics
(2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
- If two soap bubbles of different radii are connected by a tube
- An a.c. supply gives 30 volt r.m.s which passes through a 10Ω resistance.
- Energy of photon whose frequency is 10¹² MHz will be
- Two metal wires of identical dimensions are connected in series. If σ₁ and σ₂ are
- If the band gap between valence band and conduction band in a material is 5.0 eV,
Topics: Electronic Devices (124)
Subject: Physics (2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
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