| ⇦ | 
| ⇨ |
A Si and a Ge diode has identical physical dimensions. The bandgap in Si is larger than that in Ge. An identical reverse bias is applied across the diodes
Options
(a) The reverse current in Ge is larger than that in Si
(b) The reverse current in Si is larger than that in Ge
(c) The reverse current is identical in the two diodes
(d) The relative magnitude of the reverse currents cannot be determinated from the given data only
Correct Answer:
The reverse current is identical in the two diodes
Explanation:
No explanation available. Be the first to write the explanation for this question by commenting below.
Related Questions: - The electric potential at a point (x,y,z) is given by V = – x²y – xz³ + 4.
- A cockroach is moving with a velocity v in anticlockwise direction on the rim
- The necessary condition in making of a junction transistor
- The work done in which of the following processes is equal to the change in internal energy
- A thin wire of resistance 4 ohm is bent to form a circle. The resistance across
Topics: Electronic Devices
(124)
Subject: Physics
(2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
- The electric potential at a point (x,y,z) is given by V = – x²y – xz³ + 4.
- A cockroach is moving with a velocity v in anticlockwise direction on the rim
- The necessary condition in making of a junction transistor
- The work done in which of the following processes is equal to the change in internal energy
- A thin wire of resistance 4 ohm is bent to form a circle. The resistance across
Topics: Electronic Devices (124)
Subject: Physics (2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
18000+ students are using NEETLab to improve their score. What about you?
Solve Previous Year MCQs, Mock Tests, Topicwise Practice Tests, Identify Weak Topics, Formula Flash cards and much more is available in NEETLab Android App to improve your NEET score.
Share this page with your friends
Leave a Reply