| ⇦ | 
| ⇨ |
A Si and a Ge diode has identical physical dimensions. The bandgap in Si is larger than that in Ge. An identical reverse bias is applied across the diodes
Options
(a) The reverse current in Ge is larger than that in Si
(b) The reverse current in Si is larger than that in Ge
(c) The reverse current is identical in the two diodes
(d) The relative magnitude of the reverse currents cannot be determinated from the given data only
Correct Answer:
The reverse current is identical in the two diodes
Explanation:
No explanation available. Be the first to write the explanation for this question by commenting below.
Related Questions: - Pressure gradient has the same dimensions as that of
- Two coherent sources of intensity ratio α interfere. In interference pattern,
- The drift velocity does not depend upon
- Which of the following is true for elastic potential energy density?
- The phase difference between the instantaneous velocity and acceleration of a particle
Topics: Electronic Devices
(124)
Subject: Physics
(2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
- Pressure gradient has the same dimensions as that of
- Two coherent sources of intensity ratio α interfere. In interference pattern,
- The drift velocity does not depend upon
- Which of the following is true for elastic potential energy density?
- The phase difference between the instantaneous velocity and acceleration of a particle
Topics: Electronic Devices (124)
Subject: Physics (2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
18000+ students are using NEETLab to improve their score. What about you?
Solve Previous Year MCQs, Mock Tests, Topicwise Practice Tests, Identify Weak Topics, Formula Flash cards and much more is available in NEETLab Android App to improve your NEET score.
Share this page with your friends
Leave a Reply