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A Si and a Ge diode has identical physical dimensions. The bandgap in Si is larger than that in Ge. An identical reverse bias is applied across the diodes
Options
(a) The reverse current in Ge is larger than that in Si
(b) The reverse current in Si is larger than that in Ge
(c) The reverse current is identical in the two diodes
(d) The relative magnitude of the reverse currents cannot be determinated from the given data only
Correct Answer:
The reverse current is identical in the two diodes
Explanation:
No explanation available. Be the first to write the explanation for this question by commenting below.
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Topics: Electronic Devices
(124)
Subject: Physics
(2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
- A bar magnet of pole strength 10 A-m is cut into two equal parts breadthwise.
- A cricketer catches a ball of mass 150 g in 0.1 sec moving with speed 20 m/s
- A proton of mass m and charge q is moving in a plane with kinetic energy E. If there exists
- The manifestation of band structure in solids is due to
- The electric field in a certain region is acting radially outward and is given by E=Ar.
Topics: Electronic Devices (124)
Subject: Physics (2479)
Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score
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