The Boolean expression P+ P ̅ Q, where P and Q are the inputs of the logic
The Boolean expression P+ P ̅ Q, where P and Q are the inputs of the logic circuit, represents
Options
(a) AND gate (b) NAND gate (c) NOT gate (d) OR gate
Correct […]
Electronic Devices
For CE transistor amplifier, the audio signal voltage across the collector resistance
For CE transistor amplifier, the audio signal voltage across the collector resistance of 2kΩ is 4V. If the current amplification factor of the transistor is 100 and the base resistance is 1kΩ, then the input […]
In a transistor, the value of βis 100, then the value of α will be
In a transistor, the value of β is 100, then the value of α will be
Options
(a) 0.01 (b) 0.1 (c) 0.99 (d) 1
Correct Answer:
0.99
Explanation:
No explanation available. Be […]
Energy bands in solids are a consequence of
Energy bands in solids are a consequence of
Options
(a) Ohm’s law (b) Pauli’s exclusion principle (c) Bohr’s theory (d) Heisenberg’s uncertainty principle
Correct Answer:
Bohr’s theory
Explanation:
No explanation available. Be the […]
Zenor breakdown will occur if
Zenor breakdown will occur if
Options
(a) Impurity level is low (b) Impurity level is high (c) Impurity is in K-side (d) Impurity is less in K-side
Correct Answer:
Impurity level is high
Explanation: […]
The impurity atoms with which pure silicon may be doped to make it a p-type
The impurity atoms with which pure silicon may be doped to make it a p-type semiconductor are those of
Options
(a) phosphorous (b) antimony (c) boron (d) iron
Correct Answer:
boron
Explanation:
No […]
Charge density for intrinsic semiconductor will be
Charge density for intrinsic semiconductor will be
Options
(a) 15×10¹⁷ m⁻³ (b) 1.6×10¹⁶m⁻³ (c) 5×10¹³m⁻³ (d) 15×10¹⁴m⁻³
Correct Answer:
1.6×10¹⁶m⁻³
Explanation:
For intrinsic semiconductor, Charge density = 1.6 x 10¹⁶ m⁻³
Depletion layer contains
Depletion layer contains
Options
(a) Only immobile negative and positive ions (b) Only free charge carriers (c) Both free carriers and immobile ions (d) None of these
Correct Answer:
Only immobile negative and […]
The bandgap in Germanium and silicon, in eV, are respectively
The bandgap in Germanium and silicon, in eV, are respectively
Options
(a) 0.7 and 1.1 (b) 1.1 and 0.7 (c) 1.1 and zero (d) zero and 1.1
Correct Answer:
0.7 and 1.1
Explanation: […]
P-type semiconductors are made by adding impurity element
P-type semiconductors are made by adding impurity element
Options
(a) As (b) P (c) B (d) Bi
Correct Answer:
B
Explanation:
No explanation available. Be the first to write the explanation for this […]