C and Si both have same lattice strcture, having 4 bonding electron in each. However, C is insulator whereas Si is intrinsic semiconductor. This is because:
Options
(a) In case of V the […]
In the half wave rectifier circuit operating from 50 Hz mains frequency, the fundamental frequency in the ripple would be
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(a) 25 Hz (b) 50 Hz (c) 70.7 Hz (d) 100 Hz
Correct […]
In communication with help of antenna if height is doubled then the range covered which was initially r would become
Options
(a) √2r (b) 3r (c) 4r (d) 5r
Correct Answer:
√2r
Explanation:
Range […]
Pure Si at 500 K has equal number of electron (nₑ) and hole (nₕ) concentrations of 1.5 x 10¹⁶ m⁻³. Doping by indium increases nₕ to 4.5 x 10²² m⁻³. The doped semiconductor is of […]
If the highest modulating frequency of the wave is 5 kHz, the number of stations that can be accomodated in a 150 kHz bandwidth?
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(a) 15 (b) 10 (c) 5 (d) None of […]
If a small amount of antimony is added to germanium crystal
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(a) it becomes a p-type semiconductor (b) the antimony becomes an acceptor atom (c) there will be more free electrons than […]
To obtain a p-type semiconductor, germanium must be doped with
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(a) Arsenic (b) Antimony (c) Indium (d) Phosphorus
Correct Answer:
Indium
Explanation:
P-type semiconductor is obtained when Si or Ge (tetravalent) is […]
In forward biasing of the p-n junction
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(a) the positive terminal of the battery connected to p-side and the depletion region becomes thick (b) the positive terminal of the battery is connected […]
What is the voltage gain in a common-emiiter amplifier, when input resistance is 4 Ω and load resistance is 24 Ω? Take β=0.6
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(a) 3.6 (b) 4.8 (c) 2.4 (d) 1.2
Correct Answer: […]
For transistor action: (1) Base, emitter and collector regions should have similar size and doping concentrations. (2) The base region must be vary thin and lightly doped. (3) The emitter-base junction is forward biased and […]
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