A p-n photodiode is made of a material with a band gap of 2.0 eV
A p-n photodiode is made of a material with a band gap of 2.0 eV. The minimum frequency of the…
7 years ago
Electronic Devices
A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV.
A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. It can be detect a…
7 years ago
A common emitter amplifier has a voltage gain of 50, an input impedance of 100Ω
A common emitter amplifier has a voltage gain of 50, an input impedance of 100Ω and an output impedance of…
7 years ago
A transistor is operated in common-emitter configuration at Vᵥ = 2 V such that a change
A transistor is operated in common-emitter configuration at Vᵥ = 2 V such that a change in the base current…
7 years ago
A pure semiconductor behaves slightly as a conductor at
A pure semiconductor behaves slightly as a conductor at Options (a) Room temperature (b) Low temperature (c) High temperature (d)…
7 years ago
Avalanche breakdown is due to
Avalanche breakdown is due to Options (a) Collision of minority charge carrier (b) Increase in depletion layer thickness (c) Decrease…
7 years ago
A p-n-p transistor is used in common emitter mode in an amplifier circuit.
A p-n-p transistor is used in common emitter mode in an amplifier circuit. When base current is changed by an…
7 years ago
Application of a forward bias to a P-N junction
Application of a forward bias to a P-N junction Options (a) Widens the depletion region (b) Increases the potential difference…
7 years ago
In N-type semi-conductor current is due to
In N-type semi-conductor current is due to Options (a) Electrons (b) Holes (c) Electrons and holes (d) None of these…
7 years ago
An LED is constructed from a p-n junction based on a certain semi-conducting
An LED is constructed from a p-n junction based on a certain semi-conducting material whose energy gap is 1.9 eV.…
7 years ago