The impurity atoms with which pure silicon may be doped to make it a p-type
The impurity atoms with which pure silicon may be doped to make it a p-type semiconductor are those of Options…
8 years ago
Physics
Charge density for intrinsic semiconductor will be
Charge density for intrinsic semiconductor will be Options (a) 15x10¹⁷ m⁻³ (b) 1.6x10¹⁶m⁻³ (c) 5x10¹³m⁻³ (d) 15x10¹⁴m⁻³ Correct Answer: 1.6x10¹⁶m⁻³…
8 years ago
Depletion layer contains
Depletion layer contains Options (a) Only immobile negative and positive ions (b) Only free charge carriers (c) Both free carriers…
8 years ago
The bandgap in Germanium and silicon, in eV, are respectively
The bandgap in Germanium and silicon, in eV, are respectively Options (a) 0.7 and 1.1 (b) 1.1 and 0.7 (c)…
8 years ago
P-type semiconductors are made by adding impurity element
P-type semiconductors are made by adding impurity element Options (a) As (b) P (c) B (d) Bi Correct Answer: BExplanation:No…
8 years ago
A p-n photodiode is made of a material with a band gap of 2.0 eV
A p-n photodiode is made of a material with a band gap of 2.0 eV. The minimum frequency of the…
8 years ago
A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV.
A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. It can be detect a…
8 years ago
A common emitter amplifier has a voltage gain of 50, an input impedance of 100Ω
A common emitter amplifier has a voltage gain of 50, an input impedance of 100Ω and an output impedance of…
8 years ago
A transistor is operated in common-emitter configuration at Vᵥ = 2 V such that a change
A transistor is operated in common-emitter configuration at Vᵥ = 2 V such that a change in the base current…
8 years ago
A transformer rated at 10 kW is used to connect a 5 kV transmission line to a 240 V
A transformer rated at 10 kW is used to connect a 5 kV transmission line to a 240 V circuit.…
8 years ago