Pure Si at 500 K has equal number of electron (nₑ) and hole (nₕ) concentrations

⇦

⇨

Pure Si at 500 K has equal number of electron (nₑ) and hole (nₕ) concentrations of 1.5 x 10¹⁶ m⁻³. Doping by indium increases nₕ to 4.5 x 10²² m⁻³. The doped semiconductor is of

Options

(a) n-type with electron concentration nₑ = 5 x 10²² m⁻³
(b) p-type with electron concentration nₑ = 2.5 x 10¹⁰ m⁻³
(c) n-type with electron concentration nₑ = 2.5 x 10²³ m⁻³
(d) p-type with electron concentration nₑ = 5 x 10⁹ m⁻³

Correct Answer:

p-type with electron concentration nₑ = 5 x 10⁹ m⁻³

Explanation:

nᵢ² = nₑ nₕ
(1.5 x 10¹⁶)² = nₑ (4.5 x 10²²)
⇒ nₑ = 0.5 x 10¹⁰ or nₑ = 5 x 10⁹
Given nₕ = 4.5 x 10²² ⇒ nₕ >> nₑ
semiconductor is p-type and
nₑ = 5 x 10⁹ m⁻³.

Related Questions:

1. The escape velocity from the earth’s surface is 11 kms⁻¹.A certain planet
2. A proton and an alpha particle both enter a region of uniform magnetic field B,
3. A thermally insulated rigid container contains an ideal gas heated by a filament
4. A circular coil of radius 10cm and 100 turns carries a current 1 A.
5. The phenomenon of radioactivity

Topics: Electronic Devices (124)
Subject: Physics (2479)

---

Important MCQs Based on Medical Entrance Examinations To Improve Your NEET Score

18000+ students are using NEETLab to improve their score. What about you?

Solve Previous Year MCQs, Mock Tests, Topicwise Practice Tests, Identify Weak Topics, Formula Flash cards and much more is available in NEETLab Android App to improve your NEET score.

---

Share this page with your friends