Energy bands in solids are a consequence of
Energy bands in solids are a consequence of Options (a) Ohm's law (b) Pauli's exclusion principle (c) Bohr's theory (d)…
8 years ago
Questions
Zenor breakdown will occur if
Zenor breakdown will occur if Options (a) Impurity level is low (b) Impurity level is high (c) Impurity is in…
8 years ago
The impurity atoms with which pure silicon may be doped to make it a p-type
The impurity atoms with which pure silicon may be doped to make it a p-type semiconductor are those of Options…
8 years ago
Charge density for intrinsic semiconductor will be
Charge density for intrinsic semiconductor will be Options (a) 15x10¹⁷ m⁻³ (b) 1.6x10¹⁶m⁻³ (c) 5x10¹³m⁻³ (d) 15x10¹⁴m⁻³ Correct Answer: 1.6x10¹⁶m⁻³…
8 years ago
Depletion layer contains
Depletion layer contains Options (a) Only immobile negative and positive ions (b) Only free charge carriers (c) Both free carriers…
8 years ago
The bandgap in Germanium and silicon, in eV, are respectively
The bandgap in Germanium and silicon, in eV, are respectively Options (a) 0.7 and 1.1 (b) 1.1 and 0.7 (c)…
8 years ago
P-type semiconductors are made by adding impurity element
P-type semiconductors are made by adding impurity element Options (a) As (b) P (c) B (d) Bi Correct Answer: BExplanation:No…
8 years ago
A p-n photodiode is made of a material with a band gap of 2.0 eV
A p-n photodiode is made of a material with a band gap of 2.0 eV. The minimum frequency of the…
8 years ago
A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV.
A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. It can be detect a…
8 years ago
A common emitter amplifier has a voltage gain of 50, an input impedance of 100Ω
A common emitter amplifier has a voltage gain of 50, an input impedance of 100Ω and an output impedance of…
8 years ago