Electronic Devices

The necessary condition in making of a junction transistor

The necessary condition in making of a junction transistor (E- emitter, B- base and C- collector) Options (a) E and…

An amplifier has a voltage gain Av=1000. The voltage gain in dB is

An amplifier has a voltage gain Av=1000. The voltage gain in dB is Options (a) 30 dB (b) 60 dB…

A Zenor diode has a contact potential of 1 V in the absence of biasing. It undergoes

A Zenor diode has a contact potential of 1 V in the absence of biasing. It undergoes Zenor breakdown for…

A n-p-n transistor is connected in common emitter configuration in a given amplifier.

A n-p-n transistor is connected in common emitter configuration in a given amplifier. A load resistance of 800Ω is connected…

A tuned amplifier circuit is used to generate a carrier frequency of 2 MHz

A tuned amplifier circuit is used to generate a carrier frequency of 2 MHz for the amplitude modulation. The value…

A common emitter amplifier is designed with n-p-n transistor (α=0.99).

A common emitter amplifier is designed with n-p-n transistor (α=0.99). The input impedence is 1kΩ and load is 10kΩ. The…

Pure Si at 300 k has equal electrons (nₑ) and hole (nh) concentrations

Pure Si at 300 k has equal electrons (nₑ) and hole (nh) concentrations of 1.5x10⁺¹⁶ m⁻³. Dopping by indium, nh…

Which gate can be obtained by shorting both the input terminals of a NOR gate?

Which gate can be obtained by shorting both the input terminals of a NOR gate? Options (a) NOT (b) OR…

A common emitter amplifier gives an output of 3 V for an input of 0.01 V.

A common emitter amplifier gives an output of 3 V for an input of 0.01 V. If β of the…

A Si and a Ge diode has identical physical dimensions. The bandgap in Si is larger

A Si and a Ge diode has identical physical dimensions. The bandgap in Si is larger than that in Ge.…