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Pure Si at 300 k has equal electrons (nₑ) and hole (nh) concentrations

Pure Si at 300 k has equal electrons (nₑ) and hole (nh) concentrations of 1.5×10⁺¹⁶ m⁻³. Dopping by indium, nh increases to 3×10²² m⁻³. What is nₑ in doped Si?

Options

(a) 2.5×10⁹ m⁻³
(b) 5.5×10⁹ m⁻³
(c) 7.5×10⁹ m⁻³
(d) 6×10⁷ m⁻³

Correct Answer:

7.5×10⁹ m⁻³

Explanation:

No explanation available. Be the first to write the explanation for this question by commenting below.

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