Questions

An electric dipole is placed at an angle 30°with an electric field intensity 2×10⁵N/C.

An electric dipole is placed at an angle 30°with an electric field intensity 2x10⁵N/C. It experiences a torque equal to…

A condenser of capacity C is charged to a potential difference of V₁. The plates

A condenser of capacity C is charged to a potential difference of V₁. The plates of the condenser are then…

A charge Q is enclosed by a Gaussian spherical surface of radius R

A charge Q is enclosed by a Gaussian spherical surface of radius R. If the radius is doubled, then the…

The number of NAND gates required to form an AND gate is

The number of NAND gates required to form an AND gate is Options (a) 1 (b) 2 (c) 3 (d)…

The voltage gain of an amplifier with 9% negative feedback is 10. The voltage gain

The voltage gain of an amplifier with 9% negative feedback is 10. The voltage gain without feedback will be Options…

One way in which the operation of a n-p-n transistor differs from that of a p-n-p

One way in which the operation of a n-p-n transistor differs from that of a p-n-p Options (a) the emitter…

In an unbiased p-n junction, holes diffuse from the p-region to n-region because of

In an unbiased p-n junction, holes diffuse from the p-region to n-region because of Options (a) the potential difference across…

Carbon,silicon and germanium have four valence electrons each. At room temperature

Carbon,silicon and germanium have four valence electrons each. At room temperature which one of the following statements is most appropriate?…

In a common emitter (CE) amplifier having a voltage gain G, the transistor

In a common emitter (CE) amplifier having a voltage gain G, the transistor used has transconductance 0.03 mho and current…

In a n-type semiconductor, which of the following statement is true?

In a n-type semiconductor, which of the following statement is true? Options (a) Electrons and minority carriers and pentavalent atoms…