A p-n photodiode is made of a material with a band gap of 2.0 eV

A p-n photodiode is made of a material with a band gap of 2.0 eV. The minimum frequency of the radiation that can be absorbed by the material is nearly

Options

(a) 10 x 10¹⁴ Hz
(b) 5 x 10¹⁴ Hz
(c) 1 x 10¹⁴ Hz
(d) 20 x 10¹⁴ Hz

Correct Answer:

5 x 10¹⁴ Hz

Explanation:

Eₑ = 2.0 eV = 2 x 1.6 x 10⁻¹⁹ J
Eₑ = hv v = Eₑ/h = 2 x 1.6 x 10⁻¹⁹ J / 6.62 x 10⁻³⁴ Js
= 0.4833 x 10¹⁵ s⁻¹ = 4.833 x 10¹⁴ Hz
app. 5 x 10¹⁴ Hz

admin:

Related Questions

  1. The angle between the two vectors A = 3i+4j+5k and B = 3i+4j-5k will be
  2. A rectangular coil of length 0.12 m and width 0.1 m having 50 turns of wire
  3. The specific charge of a proton is 9.6×10⁷ C/kg. The specific charge of an alpha particle
  4. In a common emitter transistor amplifier, the voltage gain is
  5. The resistance of an ammeter is 13Ω and its scale is graduated for a current