Electronic Devices

Carbon,silicon and germanium have four valence electrons each. At room temperature

Carbon,silicon and germanium have four valence electrons each. At room temperature which one of the following statements is most appropriate?…

In a common emitter (CE) amplifier having a voltage gain G, the transistor

In a common emitter (CE) amplifier having a voltage gain G, the transistor used has transconductance 0.03 mho and current…

In a n-type semiconductor, which of the following statement is true?

In a n-type semiconductor, which of the following statement is true? Options (a) Electrons and minority carriers and pentavalent atoms…

The input resistance of a silicon transistor is 100 W. Base current is changed

The input resistance of a silicon transistor is 100 W. Base current is changed by 40 µA which results in…

The numebr 0 (zero) is required for

The numebr 0 (zero) is required for Options (a) Transistor (b) Abacus (c) Computer (d) Calculator Correct Answer: ComputerExplanation:No explanation…

C and Si both have same lattice strcture, having 4 bonding electron in each

C and Si both have same lattice strcture, having 4 bonding electron in each. However, C is insulator whereas Si…

In the half wave rectifier circuit operating from 50 Hz mains frequency,

In the half wave rectifier circuit operating from 50 Hz mains frequency, the fundamental frequency in the ripple would be…

In communication with help of antenna if height is doubled then the range

In communication with help of antenna if height is doubled then the range covered which was initially r would become…

Pure Si at 500 K has equal number of electron (nₑ) and hole (nₕ) concentrations

Pure Si at 500 K has equal number of electron (nₑ) and hole (nₕ) concentrations of 1.5 x 10¹⁶ m⁻³.…

If the highest modulating frequency of the wave is 5 kHz, the number

If the highest modulating frequency of the wave is 5 kHz, the number of stations that can be accomodated in…